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In Search of the Next Memory

In Search of the Next Memory

Inside the Circuitry from the Oldest to the Emerging Non-Volatile Memories
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Historical overview of solid-state non-volatile memories.- State of art limitations.- New approaches to non-volatile memories.- Core circuitry.- Periphery circuitry.- Functional interfaces.- Error management.- Algorithm to survive.- Final considerations.
This book provides students and practicing chip designers with an easy-to-follow yet thorough, introductory treatment of the most promising emerging memories under development in the industry. Focusing on the chip designer rather than the end user, this book offers expanded, up-to-date coverage of emerging memories circuit design. After an introduction on the old solid-state memories and the fundamental limitations soon to be encountered, the working principle and main technology issues of each of the considered technologies (PCRAM, MRAM, FeRAM, ReRAM) are reviewed and a range of topics related to design is explored: the array organization, sensing and writing circuitry, programming algorithms and error correction techniques are reviewed comparing the approach followed and the constraints for each of the technologies considered. Finally the issue of radiation effects on memory devices has been briefly treated. Additionally some considerations are entertained about how emerging memories can find a place in the new memory paradigm required by future electronic systems. This book is an up-to-date and comprehensive introduction for students in courses on memory circuit design or advanced digital courses in VLSI or CMOS circuit design. It also serves as an essential, one-stop resource for academics, researchers and practicing engineers.

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Autor: Roberto Gastaldi
ISBN-13: 9783319477220
ISBN: 3319477226
Einband: Buch
Seiten: 251
Gewicht: 564 g
Format: 241x161x22 mm
Sprache: Englisch
Autor: Roberto Gastaldi, Giovanni Campardo
Roberto Gastaldi was born in Reggio Emilia, Italy in 1953. He received the laurea degree in Electronic Engineering from Politecnico of Milano in 1977. He attended a postgraduate course in solid-state physics at Perugia University in 1978 and a postgraduate course in Business management at Bocconi University (Milano) in 1995. In 1977 he joined SGS-ATES (later STMicrolectronics) in Agrate Brianza (Milano) where he was involved as a device engineer in central R&D department. In 1980 he moved to memory design team working on first EPROM and EEPROM products development and later as a responsible of EPROM design team he was in charge of the EPROM family design scaling roadmap. He was involved in early 256K to 8Mb Flash-NOR product development and as a member of technical staff he contributed to industrialization of first Flash-NOR products
In 2000 he took the lead of RAM design team to design SRAM and PSRAM to be used in MCP products creating from scratch a 512K-16Mb SRAM and 32-64-128Mb PSRAM product family
In 2003 he started to work on PCRAM technology development and in 2006 was co-owner of the first 128Mb PCM product worldwide in 90nm technology.
In 2008 he joined Micron Semiconductor and was responsible for Emerging Memory design team, since then he made evaluations and feasibility studies on different emerging memory technologies such as T-RAM, Fe-RAM, STT-RAM. His present interests are on smart Error Correction architectures and 3D memory systems.

Mr. Gastaldi owns more than 50 US granted patents and a number of publications concerning NVM design.

He served as a member of ISSCC International technical Memory subcommittee from 2009 to 2011 and he chaired ISSCC2010 non-volatile memory session in 2010. He was a member of the winner team of "innovator of the year" award for EDN in 2009.
Mr. Gastaldi has been a lecturer on selected topics on Microelectronics at Pavia University in 2008-2014 and since 2014 he is a member of Catrene Application steering group.
Mr. Gastaldi is a member of IEEE

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Autor: Roberto Gastaldi
ISBN-13:: 9783319477220
ISBN: 3319477226
Erscheinungsjahr: 15.03.2017
Verlag: Springer-Verlag GmbH
Gewicht: 564g
Seiten: 251
Sprache: Englisch
Sonstiges: Buch, 241x161x22 mm, Bibliographie