UV Solid-State Light Emitters and Detectors
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UV Solid-State Light Emitters and Detectors

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Michael S. Shur
653 g
235x155x23 mm
Proceedings of the NATO Advanced Research Workshop, held in Vilnius, 17-21 June, 2003
Contributing Authors. Preface.Basic Device Issues in UV Solid-State Emitters and Detectors; M.S. Shur, A. Zukauskas.
HVPE-Grown AlN-GaN Based Structures for UV Spectral Region; A.S. Usikov, et al.
GaN-Based Laser Diodes; S. Einfeldt, et al. Quaternary AlInGaN Materials System for UV Optoelectronics; E. Kuokstis, et al.
III-Nitride Based UV Light Emitting Diodes; R. Gaska, et al.
UV Metal Semiconductor Metal Detectors; J.-L. Reverchon, et al.
Characterization of Advanced Materials for Optoelectronics by Using UV Lasers and Four-Wave Mixing Techniques; K. Jarasiunas.
Quantum Phosphors; A.P. Vink, et al. Optical Measurements Using Light-Emitting Diodes; A. Zukauskas, et al.
Novel AlGaN Heterostructures for UV Sensors and LEDs; M. Stutzmann.
Nitride Photodetectors in UV Biological Effects Studies; E. Muñoz, et al.
Promising Results of Plasma Assisted MBE for Optoelectronic Applications; A. Georgakilas, et al.
Low Dislocations Density GaN/Sapphire for Optoelectronic Devices; B. Beaumont, et al.
Stimulated Emission and Gain in GaN Epilayers Grown on Si; A.L. Gurskii, et al.
Materials Characterization of Group-III Nitrides under High-Power Photoexcitation; S. Jursenas, et al.
Small Internal Electric Fields in Quaternary InAlGaN Heterostructures; S. Anceau, et al.
MOCVD Growth of AlGaN Epilayers and AlGaN/GaN SLs in a Wide Composition Range; W.V. Lundin, et al.
Gallium Nitride Schottky Barriers and MSM UV Detectors; B. Boratynski, M. Tlaczala.
III-Nitride Based Ultraviolet Surface Acoustic Wave Sensors; D. Ciplys, et al.
Optically Pumped InGaN/GaN/AlGaN MQW Laser Structures; V.Yu. Ivanov, et al.
High Power LED and Thermal Management; A. Mahlkow.
Detection of Blue Light by Self-Assembled Monolayer of Dipolar Molecules; O. Nielands, et al.
Atomic and Molecular Spectroscopy with UV and Visible Superbright LEDs; G. Pichler, et al.
Semi-Insulating GaN and its First Tests for RadiationHardness as an Ionizing Radiation Detector; J.V. Vaitkus, et al.
Towards the Hybrid Biosensors Based on Biocompatible Conducting Polymers; A. Ramanaviciene, A. Ramanavicius.
Optically Pumped UV-Blue Lasers Based on InGaN/GaN/Al2O3 and InGaN/GaN/Si Heterostructures; G.P. Yablonskii, et al.
Key Word Index. Author Index.
Infrared and visible light LEDs and photodetectors have found numerous applications and have become a truly enabling technology. The promise of solid state lighting has invigorated interest in white light LEDs. Ultraviolet LEDs and solar blind photodetectors represent the next frontier in solid state emitters and hold promise for many important applications in biology, medi cine, dentistry, solid state lighting, displays, dense data storage, and semi conductor manufacturing. One of the most important applications is in sys tems for the identification of hazardous biological agents. Compared to UV lamps, UV LEDs have lower power consumption, a longer life, compactness, and sharper spectral lines. UV LEDs can provide a variety of UV spectra and have shape and form factor flexibility and rugged ness. Using conventional phosphors, UV LEDs can generate white light with high CRI and high efficiency. If quantum cutter phosphors are developed, white light generation by UV LEDs might become even more efficient. Advances in semiconductor materials and in improved light extraction techniques led to the development of a new generation of efficient and pow erful visible high-brightness LEDs and we expect that similar improvements will be achieved in solid-state UV technology.